Deposition of a–Si:H and a-C:H using an expanding thermal arc plasma”, Plasma Sources Sci

Abstract. This paper deals with the deposition of a-C:H and a-Si:H using the expanding thermal arc technique. The method is compared with other deposition techniques. The basics of the technique are explained and recent results on the deposition of high-quality a-C:H and a-Si:H are discussed. It is shown that high rates, 7 nm s−1 for a-Si:H and 50 nm s−1 for a-C:H, are possible without loss of quality. 1